RC28F256P30BFA NUMONYX, RC28F256P30BFA Datasheet - Page 25

• Manufacturer Part Number: RC28F256P30BFA
• Description: IC FLASH 256MBIT 100NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC28F256P30BFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 898885; 898885; RC28F256P30BF 898885

P30-65nm
7.0
7.1
7.2
Datasheet
25
Read Operation
The device supports two read modes: asynchronous page mode and synchronous burst
mode. Asynchronous page mode is the default read mode after device power-up or a
reset. The Read Configuration Register must be configured to enable synchronous burst
reads of the flash memory array (see
page
The device can be in any of four read states: Read Array, Read Identifier, Read Status
or Read CFI. Upon power-up, or after a reset, the device defaults to Read Array. To
change the read state, the appropriate read command must be written to the device
(see
Asynchronous Page-Mode Read
Following a device power-up or reset, asynchronous page mode is the default read
mode and the device is set to Read Array. However, to perform array reads after any
other device operation (e.g. write operation), the Read Array command must be issued
in order to read from the flash memory array.
Asynchronous page-mode reads can only be performed when Read Configuration
Register bit RCR.15 is set (see
To perform an asynchronous page-mode read, an address is driven onto the Address
bus, and CE# and ADV# are asserted. WE# and RST# must already have been
deasserted. WAIT is deasserted during asynchronous page mode. ADV# can be driven
high to latch the address, or it must be held low throughout the read cycle. CLK is not
used for asynchronous page-mode reads, and is ignored. If only asynchronous reads
are to be performed, CLK should be tied to a valid V
and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial
access time t
In asynchronous page mode, sixteen data words are “sensed” simultaneously from the
flash memory array and loaded into an internal page buffer. The buffer word
corresponding to the initial address on the Address bus is driven onto DQ[15:0] after
the initial access delay. The lowest four address bits determine which word of the 16-
word page is output from the data buffer at any given time.
Synchronous Burst-Mode Read
To perform a synchronous burst-read, an initial address is driven onto the Address bus,
and CE# and ADV# are asserted. WE# and RST# must already have been deasserted.
ADV# is asserted, and then deasserted to latch the address. Alternately, ADV# can
remain asserted throughout the burst access, in which case the address is latched on
the next valid CLK edge while ADV# is asserted.
During synchronous array and non-array read modes, the first word is output from the
data buffer on the next valid CLK edge after the initial access latency delay (see
11.2.2, “Latency Count” on page
following a minimum delay. However, for a synchronous non-array read, the same word
of data will be output on successive clock edges until the burst length requirements are
satisfied. Refer to the following waveforms for more detailed information:
•
•
•
Figure 24, “Synchronous Single-Word Array or Non-array Read Timing” on page 57
Figure 25, “Continuous Burst Read, Showing An Output Delay Timing” on page 58
Figure 26, “Synchronous Burst-Mode Four-Word Read Timing” on page 58
Section 6.0, “Command Set” on page
39).
AVQV
delay. (see
Section 15.0, “AC Characteristics” on page
Section 11.2, “Read Configuration Register” on page
40). Subsequent data is output on valid CLK edges
Section 11.2, “Read Configuration Register” on
21).
IH
level, WAIT signal can be floated
Order Number: 320002-10
53).
Section
Mar 2010
39).