FQB50N06 Fairchild Semiconductor, FQB50N06 Datasheet - Page 4

• Manufacturer Part Number: FQB50N06
• Description: MOSFET, N, D2-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of FQB50N06

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 25V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
10
10
10
Figure 9. Maximum Safe Operating Area
10
3
2
1
0
Figure 7. Breakdown Voltage Variation
-1
-50
V
T
DS
J
, Junction Temperature [
vs. Temperature
, Drain-Source Voltage [V]
0
10
1 0
1 0
1 0
Operation in This Area
is Limited by R
0
※ Notes :
- 1
- 2
1. T
2. T
3. Single Pulse
1 0
0
C
J
= 175
- 5
= 25
D = 0 . 5
50
0 . 0 2
0 . 0 1
0 . 0 5
0 . 2
0 . 1
o
C
o
DS(on)
C
DC
Figure 11. Transient Thermal Response Curve
100
10 ms
10
1 0
(Continued)
o
1
C]
t
- 4
s i n g l e p u l s e
1
1 ms
※ Notes :
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
= 250 μ A
100μ s
= 0 V
150
1 0
- 3
10
200
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
60
50
40
30
20
10
0
25
Figure 8. On-Resistance Variation
1 0
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
-50
50
DM
θ
J M
J C
- T
( t ) = 1 . 2 4 ℃ /W M a x .
C
vs. Case Temperature
= P
T
T
J
vs. Temperature
C
, Junction Temperature [
t
1
, Case Temperature [ ℃ ]
0
D M
75
1 0
t
2
* Z
0
θ
1
/t
J C
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 25 A
= 10 V
175
Rev. A2. Oct 2008
200