FQD18N20V2 Fairchild Semiconductor, FQD18N20V2 Datasheet - Page 3

• Manufacturer Part Number: FQD18N20V2
• Description: MOSFET, N, D-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of FQD18N20V2

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
2500
2000
1500
1000
0.5
0.4
0.3
0.2
0.1
0.0
500
-1
1
0
10
0
10
0
-1
Top :
Bottom :
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
10
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
I
D
10
, Drain Current [A]
10
0
0
C
rss
30
V
C
V
GS
oss
GS
= 20V
= 10V
C
C
C
C
iss
40
iss
oss
rss
= C
= C
= C
※ Notes :
1. 250 μ s Pulse Test
2. T
10
gs
gd
ds
10
※ Note : T
+ C
1
+ C
C
1
= 25 ℃
gd
gd
(C
50
※ Notes :
ds
1. V
2. f = 1 MHz
= shorted)
J
= 25 ℃
GS
= 0 V
60
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0
0.2
4
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
150℃
Variation vs. Source Current
5
5
25 ℃
150 ℃
0.6
V
V
Q
and Temperature
GS
SD
25℃
G
6
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
V
10
DS
V
0.8
= 160V
DS
V
= 100V
DS
7
= 40V
-55 ℃
1.0
15
8
1.2
※ Notes :
※ Note : I
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
20
DS
GS
= 40V
9
= 0V
D
1.4
= 18A
Rev. B2, January 2009
25
10
1.6