MOC213R2M Fairchild Semiconductor, MOC213R2M Datasheet - Page 9

• Manufacturer Part Number: MOC213R2M
• Description: Transistor Output Optocouplers SO-8 PHOTO TRANS T/R
• Manufacturer: Fairchild Semiconductor

Specifications of MOC213R2M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 2500 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: SOIC W
• Collector Current (dc) (max): 150mA
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MOC213R2M_NL

©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.1
Reflow Profile
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t
Ramp-up Rate (t
Liquidous Temperature (T
Time (t
Peak Body Package Temperature
Time (t
Ramp-down Rate (T
Time 25°C to Peak Temperature
260
240
220
200
180
160
140
120
100
80
60
40
20
0
S
L
P
) Maintained Above (T
) from (Tsmin to Tsmax)
) within 5°C of 260°C
T
T
L
Profile Freature
P
Tsmax
Tsmin
L
to t
P
Max. Ramp-down Rate = 6°C/S
P
Max. Ramp-up Rate = 3°C/S
to T
Preheat Area
)
L
L
120
)
)
Time 25°C to Peak
L
)
Time (seconds)
9
t
Pb-Free Assembly Profile
s
240
260°C +0°C / –5°C
3°C/second max.
6°C/second max.
60–120 seconds
60–150 seconds
8 minutes max.
30 seconds
150°C
200°C
217°C
t
L
t
P
360
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