HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 2

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Device #1 FGH50N6S2D
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #2 HGTG27N120BN
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #3 HUF75344G3
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
P/C
P/C
P/C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
Qualification Stress Test and Sample Size Detail
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Readpoints
TP1
1000
200
Readpoints
TP1
1000
200
Readpoints
TP1
1000
TP2
5000
500
TP2
5000
500
TP2
5000
Samples
A
77
77
77
Samples
A
77
77
77
Samples
A
77
77
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