HGTP12N60C3D Fairchild Semiconductor, HGTP12N60C3D Datasheet - Page 6

• Manufacturer Part Number: HGTP12N60C3D
• Description: IGBT SMPS N-CH 600V 24A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
Test Circuit and Waveform
©2001 Fairchild Semiconductor Corporation
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
50
40
30
20
10
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
0
10
0
10
10
-2
-1
0
10
R
-5
G
0.05
0.02
0.5
0.01
0.2
0.1
VOLTAGE DROP
= 25
0.5
V
150
EC
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
SINGLE PULSE
1.0
o
, FORWARD VOLTAGE (V)
C
100
10
-4
o
1.5
C
L = 100 H
2.0
HGTP12N60C3D
+
(Continued)
-
V
10
DD
2.5
25
-3
o
= 480V
t
1
C
, RECTANGULAR PULSE DURATION (s)
3.0
10
-2
V
V
DUTY FACTOR, D = t
PEAK T
I
CE
GE
CE
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
35
30
25
20
15
10
5
0
J
0
= P
FIGURE 21. SWITCHING TEST WAVEFORMS
T
C
D
x Z
= 25
t
d(OFF)I
10
JC
o
90%
C, dI
-1
1
x R
/ t
10%
5
I
2
EC
EC
JC
t
fi
/dt = 200A/ms
, FORWARD CURRENT (A)
+ T
C
E
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
OFF
90%
10
P
D
10
E
0
ON
10%
t
t
1
d(ON)I
t
2
15
t
ri
t rr
t a
t b
10
1
20