HGTP12N60C3D Fairchild Semiconductor, HGTP12N60C3D Datasheet - Page 7

• Manufacturer Part Number: HGTP12N60C3D
• Description: IGBT SMPS N-CH 600V 24A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP12N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
©2001 Fairchild Semiconductor Corporation
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
monolithic Zener Diode from gate to emitter. If gate
protection is required, an external Zener is
recommended.
GEM
. Exceeding the rated V
LD26” or equivalent.
GE
can result in
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
f
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
E
shown in Figure 21. E
power loss (I
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E
collector current equals zero (I
MAX2
MAX1
MAX2
C
ON
= (V
and E
is defined by f
whichever is smaller at each point. The information is
is defined by f
CE
CE
D
. A 50% duty factor was used (Figure 13) and the
OFF
x I
) plots are possible using the information shown
CE
CE
D(OFF)I
are defined in the switching waveforms
x V
)/2.
CE
MAX2
MAX1
C
ON
and t
) during turn-on and E
D
) are approximated by
) is defined by P
is the integral of the instantaneous
= (P
= 0.05/(t
D(ON)I
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
D
CE
- P
= 0).
are defined in Figure 21.
C
D(OFF)I
)/(E
D
OFF
= (T
+ t
+ E
OFF
JM
OFF
D(ON)I
JM
ON
- T
is the
; i.e., the
. t
). The
C
MAX1
D(OFF)I
).
)/R
JC
or
.