FGAF40N60UFDTU Fairchild Semiconductor, FGAF40N60UFDTU Datasheet - Page 6

• Manufacturer Part Number: FGAF40N60UFDTU
• Description: IGBT FAST W/DIODE 600V TO-3PF
• Manufacturer: Fairchild Semiconductor

Specifications of FGAF40N60UFDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 3.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Fig 18. Forward Characteristics
Fig 20. Stored Charge
800
600
400
200
100
10
0
1
0
V
I
T
T
T
T
F
R
C
C
C
C
= 15A
= 200V
= 25℃
= 100℃
= 25 ℃
= 100 ℃
200
1
Forward Voltage Drop, V
di/dt [A/us]
400
2
600
800 1000
3
Fig 21. Reverse Recovery Time
Fig 19. Reverse Recovery Current
100
120
100
80
60
40
20
10
1
V
I
T
T
F
R
C
C
= 15A
= 25℃
= 100℃
= 200V
200
200
di/dt [A/us]
di/dt [A/us]
400
400
V
I
T
T
F
R
C
C
= 15A
600
= 200V
= 25℃
= 100℃
600
FGAF40N60UFD Rev. A
800 1000
800 1000