FGAF40N60UFDTU Fairchild Semiconductor, FGAF40N60UFDTU Datasheet
FGAF40N60UFDTU
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FGAF40N60UFDTU Summary of contents
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... Symbol R (IGBT) Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2004 Fairchild Semiconductor Corporation Features • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : t TO-3PF unless otherwise noted C Description @ T ...
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... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2004 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 600 0V 1mA ...
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... Vge=15V Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 40A 20A 10A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2004 Fairchild Semiconductor Corporation 80 Common Emitter 20V Tc= 25 ℃ Tc= 125 ℃ 15V 60 50 12V 10V 0 (V) CE Fig 2. Typical Saturation Voltage ...
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... ℃ 125 ℃ 100 Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance 200 100 Ton Collector Current, Ic (A) Fig 11. Turn-On Characteristics vs. Collector Current ©2004 Fairchild Semiconductor Corporation 300 Common Emitter Common Emitter 1MHz Vcc=300V ℃ T Ic=20A ℃ 125 ℃ 100 (V) CE Fig 8 ...
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... Single Nonrepetitive o Pulse Curves must be derated linearly with increase in temperature 0 Collector - Emitter Voltage, V Fig 15. SOA Characteristics sin gle p ulse ©2004 Fairchild Semiconductor Corporation 15 Common Emitter R (Tc=25 ℃ ± 15V = 300V ℃ = 125 ℃ Fig 14. Gate Charge Characteristics 500 100 50 s 100 s ...
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... Forward Voltage Drop, V Fig 18. Forward Characteristics 800 V = 200V 15A 25℃ C 600 T = 100℃ C 400 200 0 200 di/dt [A/us] Fig 20. Stored Charge ©2004 Fairchild Semiconductor Corporation 100 Fig 19. Reverse Recovery Current 120 100 400 600 800 1000 Fig 21. Reverse Recovery Time V = 200V 15A ...
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... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 – ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...