HGTG27N120BN Fairchild Semiconductor, HGTG27N120BN Datasheet - Page 2

• Manufacturer Part Number: HGTG27N120BN
• Description: IGBT NPT N-CH 1200V 72A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG27N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 27A
• Current - Collector (ic) (max): 72A
• Power - Max: 500W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 72 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 72 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 72A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device #1 FGH50N6S2D
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #2 HGTG27N120BN
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
TMCL1
Device #3 HUF75344G3
Package:
#Leads:
Environment Stress Detail:
Stress
ACLV
PRCL
P/C
P/C
P/C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
MIL-
Qualification Stress Test and Sample Size Detail
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Min on/off
Conditions
Delta 100C, 5
Readpoints
TP1
1000
200
Readpoints
TP1
1000
200
Readpoints
TP1
1000
TP2
5000
500
TP2
5000
500
TP2
5000
Samples
A
77
77
77
Samples
A
77
77
77
Samples
A
77
77
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