SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 11

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

Figure B. Definition of switching losses
Figure A. Definition of switching times
SGP30N60,
11
p(t)
T (t)
j
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
1
r
1
SGW30N60
SGB30N60
r
2
2
r
2
=180nH
=900pF.
r
n
n
r
n
Jul-02
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C