SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 7

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

5.0mJ
4.5mJ
4.0mJ
3.5mJ
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
GE
= 30A, R
10A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
20A
T
j
I
G
,
on
on
C
JUNCTION TEMPERATURE
,
= 11 ,
and E
and E
COLLECTOR CURRENT
50°C
30A
G
j
CE
ts
ts
= 150 C, V
= 11 ,
include losses
include losses
= 400V, V
40A
100°C
50A
CE
GE
= 400V,
= 0/+15V,
60A
150°C
E
E
E
E
on
E
E
ts
off
off
*
on
*
ts
70A
*
*
SGP30N60,
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
10
10
10
10
4.0mJ
3.5mJ
3.0mJ
2.5mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
10
GE
-1
-2
-3
-4
0
K/W
K/W
K/W
K/W
K/W
0
= 0/+15V, I
1µs
p
/ T)
0.02
0.1
0.05
0.01
D=0.5
0.2
single pulse
*) E
due to diode recovery.
10µs
10
on
R
and E
C
G
t
p
,
100µs
= 30A,
,
j
GATE RESISTOR
= 150 C, V
PULSE WIDTH
ts
include losses
20
R
0.3681
0.0938
0.0380
R , ( 1 / W )
1
C
SGW30N60
1ms
1
SGB30N60
=
1
/ R
CE
30
10ms 100ms
1
= 400V,
C
0.0555
1.26*10
1.49*10
2
=
, ( s ) =
E
E
E
2
on
/ R
off
ts
40
*
*
R
2
-3
-4
2
1s
Jul-02