SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 5

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

100A
90A
80A
70A
60A
50A
40A
30A
20A
10A
Figure 7. Typical transfer characteristics
(V
0A
90A
80A
70A
60A
50A
40A
30A
20A
10A
Figure 5. Typical output characteristics
(T
0A
CE
0V
0V
j
= 25 C)
= 10V)
V
CE
V
V
,
GE
GE
1V
COLLECTOR
2V
=20V
,
15V
13V
11V
9V
7V
5V
GATE
-
2V
EMITTER VOLTAGE
4V
-
EMITTER VOLTAGE
3V
6V
T
j
+150°C
=+25°C
-55°C
4V
8V
SGP30N60,
5V
10V
5
90A
80A
70A
60A
50A
40A
30A
20A
10A
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
0A
Figure 6. Typical output characteristics
(T
GE
0V
j
= 150 C)
= 15V)
V
-50°C
CE
V
,
T
GE
1V
COLLECTOR
j
,
=20V
JUNCTION TEMPERATURE
15V
13V
11V
9V
7V
5V
0°C
I
2V
C
= 60A
-
EMITTER VOLTAGE
SGW30N60
50°C
I
SGB30N60
C
= 30A
3V
100°C
4V
150°C
Jul-02
5V