SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 6

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

1000ns
1000ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
100ns
100ns
C
GE
10ns
10ns
= 30A, R
= 0/+15V, R
0°C
10A
t
t
d(off)
t
d(off)
t
t
d(on)
t
T
t
d(on)
f
r
f
t
j
I
r
G
,
C
JUNCTION TEMPERATURE
,
= 11 ,
COLLECTOR CURRENT
20A
G
50°C
j
CE
= 150 C, V
= 11 ,
= 400V, V
30A
100°C
40A
CE
GE
= 400V,
= 0/+15V,
50A
150°C
60A
SGP30N60,
6
1000ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
100ns
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
GE
C
10ns
= 0.7mA)
= 0/+15V, I
0
-50°C
T
j
,
JUNCTION TEMPERATURE
R
10
C
G
,
= 30A,
j
0°C
GATE RESISTOR
= 150 C, V
20
SGW30N60
SGB30N60
50°C
CE
= 400V,
30
100°C
t
t
t
r
d(on)
f
t
d(off)
150°C
40
max.
typ.
min.
Jul-02