SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 8

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

25 s
20 s
15 s
10 s
25V
20V
15V
10V
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
5 s
0 s
5V
0V
10V
CE
0nC
Figure 17. Typical gate charge
(I
C
= 600V, start at T
= 30A)
V
11V
GE
50nC
,
Q
GATE
GE
,
12V
GATE CHARGE
-
100nC
EMITTER VOLTAGE
j
= 25 C)
13V
120V
150nC
14V
480V
200nC
15V
SGP30N60,
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
10pF
500A
450A
400A
350A
300A
250A
200A
150A
100A
1nF
50A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
600V, T
0V
V
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
12V
,
j
= 150 C)
GATE
10V
-
EMITTER VOLTAGE
14V
-
EMITTER VOLTAGE
SGW30N60
SGB30N60
20V
16V
30V
18V
C
C
C
iss
oss
rss
Jul-02
20V