SGP30N60 Infineon Technologies, SGP30N60 Datasheet - Page 4

• Manufacturer Part Number: SGP30N60
• Description: IGBT 600V 30A TO-263
• Manufacturer: Infineon Technologies

Specifications of SGP30N60

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 41A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 41 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 41.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SGP30N60IN

160A
140A
120A
100A
300W
250W
200W
150W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
80A
60A
40A
20A
50W
GE
0A
0W
j
j
10Hz
25°C
= 0/+15V, R
150 C, D = 0.5, V
150 C)
f,
T
100Hz
50°C
SWITCHING FREQUENCY
C
,
CASE TEMPERATURE
I
G
c
T
= 11 )
C
T
=110°C
75°C
C
=80°C
1kHz
CE
= 400V,
100°C
I
10kHz
c
125°C
100kHz
SGP30N60,
4
100A
Figure 4. Collector current as a function of
case temperature
(V
0.1A
10A
60A
50A
40A
30A
20A
10A
1A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
Limited by bond wire
T
50°C
C
j
,
C
CASE TEMPERATURE
10V
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
SGW30N60
SGB30N60
j
100V
100°C
150 C)
125°C
1000V
t
15 s
200 s
50 s
1ms
p
DC
=4 s
Jul-02