2N5460 Fairchild Semiconductor, 2N5460 Datasheet
2N5460
Specifications of 2N5460
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2N5460 Summary of contents
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... Mark 61U / 61V TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N5460-5462 350 2.8 125 357 S D NOTE: Source & Drain are interchangeable Value Units - -55 to +150 C Max Units *MMBF5460-5462 225 mW 1.8 mW/ C C/W 556 C/W 2N5460/5461/5462/MMBF5460/5461/5462, Rev A ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current* DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Conductance g ...
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Typical Characteristics Transfer Characteristics Common Drain-Source Leakage Current vs. Voltage P-Channel General Purpose Amplifier (continued) Transfer Charactersitics Parameter Interactions Channel Resistance vs. (continued) Temperature ...
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Typical Characteristics Output Conductance vs. Drain Current Noise Voltage vs. Frequency 350 300 250 200 150 100 P-Channel General Purpose Amplifier (continued) Transconductance vs. Capacitance vs. Voltage Power Dissipation vs. Ambient Temperature TO-92 SOT- ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...