FDS8958B Fairchild Semiconductor, FDS8958B Datasheet - Page 3

• Manufacturer Part Number: FDS8958B
• Description: MOSFET N/P-CH 30V TRENCH 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958B

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 6.4 A @ N Channel or 4.5 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958BTR

FDS8958B Rev.B
©2008 Fairchild Semiconductor Corporation
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. UIL condition: Starting T
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
the user's board design.
SD
rr
θJA
Symbol
is determined with the device mounted on a 1 in
Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
J
= 25 °C, L = 1 mH, I
= 25 °C, L = 1 mH, I
Parameter
AS
AS
= -4 A, V
= 6 A, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a) 78 °C/W when
J
mounted on a 1 in
pad of 2 oz copper
DD
= 25 °C unless otherwise noted
DD
= 27 V, V
= -27 V, V
GS
GS
V
V
Q1
I
Q2
I
= 10 V . (Q1)
F
F
= -10 V. (Q2)
GS
GS
2
= 6.4 A, di/dt = 100 A/µs
= -4.5 A, di/dt = 100 A/µs
= 0 V, I
= 0 V, I
Test Conditions
3
S
S
= 1.3 A
= -1.3 A
(Note 2)
(Note 2)
θJC
b) 135 °C/W when
Type
is guaranteed by design while R
mounted on a
minimun pad
Q1
Q2
Q1
Q2
Q1
Q2
Min
Typ
-0.8
0.8
17
20
6
8
θCA
Max
www.fairchildsemi.com
-1.2
1.2
30
36
12
16
is determined by
Units
nC
ns
V