FDS8958B Fairchild Semiconductor, FDS8958B Datasheet - Page 6

• Manufacturer Part Number: FDS8958B
• Description: MOSFET N/P-CH 30V TRENCH 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958B

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 6.4 A @ N Channel or 4.5 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958BTR

FDS8958B Rev.B
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12.
10
-3
Junction-to-Ambient Transient Thermal Response Curve
10
SINGLE PULSE
R
-2
θ
JA
= 135
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
T
-1
J
6
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
10
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
t
100
1
+ T
t
2
A
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