FDG6335N Fairchild Semiconductor, FDG6335N Datasheet

MOSFET N-CH 20V 700MA SOT-363

FDG6335N

Manufacturer Part Number
FDG6335N
Description
MOSFET N-CH 20V 700MA SOT-363
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG6335N

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1609797

Available stocks

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Quantity
Price
Part Number:
FDG6335N
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Company:
Part Number:
FDG6335N
Quantity:
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Company:
Part Number:
FDG6335N
Quantity:
770
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Ursal, Randy
E-mail: Randy.Ursal@notes.fairchildsemi.com
Phone:
Implementation of change:
Expected 1st Device Shipment Date: 2008/05/29
Earliest Year/Work Week of Changed Product: 0822
Change Type Description: Mold Compound
Description of Change (From): SC70 package assembly in FSC approved manufacturing
location (FSCP) using non Green mold compound as shown in table 1:
Description of Change (To): SC70 package assembly in FSC approved manufacturing location
(FSCP) using Green mold compound as shown in table 2:
Reason for Change : Green initiative by Fairchild Semiconductor. Fairchild Semiconductor is
dedicated to being a good corporate citizen. All Fairchild Semiconductor products are 2nd level
interconnect lead-free and RoHS compliance. The referenced material changes have been made
to provide a 'Full Green' (Halogen Free Flame Retardant) package. For additional details on the
corporate wide green initiative please visit our Web site at:
http://www.fairchildsemi.com/company/green/index.html Manufacturing will occur at the same
assembly facilities producing the current non-green products. Package outline drawings of the
affected products remain un-changed. Green products will be fully compliant to all published
data sheet specifications and will be interchangeable with current non-green product. Quality
and reliability will remain at the highest standards already demonstrated with Fairchild's
existing products.
Qual/REL Plan Numbers : Q20070416
Qualification :
The Reliability Test requirements as defined in iRel QP Q20070416 for SC70-6L in
Green EMC passed the Reliability Requirements using Green EMC GR828HS.
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Ursal, Randy
E-mail: Randy.Ursal@notes.fairchildsemi.com
Phone:
Date Issued On : 2008/05/07
Date Created : 2008/04/17
PCN# : Q4074815-A
Pg. 1

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FDG6335N Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Change From Change To Pg. 2 ...

Page 3

Results/Discussion Test: (Autoclave) Lot Device Q20070416AAACLV FDG313N Q20070416ABACLV FDG313N Q20070416ACACLV FDG313N Q20070416BAACLV FDG6323L Q20070416BBACLV FDG6323L Q20070416BCACLV FDG6323L Q20070416CAACLV FDG361N Q20070416DAACLV NC7WZ17P6X Test: (High Humidity, High Temp, Rev. Bias) Lot Device Q20070416AAH3TRB FDG313N Q20070416ABH3TRB FDG313N Q20070416ACH3TRB FDG313N Test: (High Temperature Gate ...

Page 4

Q20070416CAHTGB FDG361N Q20070416CAHTGB FDG361N Test: (High Temperature Reverse Bias) Lot Device Q20070416AAHTRB FDG313N Q20070416AAHTRB FDG313N Q20070416ABHTRB FDG313N Q20070416ABHTRB FDG313N Q20070416ACHTRB FDG313N Q20070416ACHTRB FDG313N Q20070416CAHTRB FDG361N Q20070416CAHTRB FDG361N Test: (Power Cycle) Lot Device Q20070416AAPRCL FDG313N Q20070416AAPRCL FDG313N Q20070416ABPRCL FDG313N Q20070416ABPRCL FDG313N ...

Page 5

... FDG315N FDG326P FDG327NZ FDG328P_NL FDG332PZ FDG6301N_NL FDG6303N_NL FDG6304P_NL FDG6306P_SBGX002 FDG6316P FDG6318P FDG6320C FDG6321C_NL FDG6323L FDG6331L FDG6332C_NL FDG6335N_NL FDG8850NZ Failure Code Failure Code FDG312P FDG313N_NL FDG316P FDG326P_NL FDG327N_NL FDG329N FDG361N FDG6302P FDG6304P FDG6306P FDG6308P FDG6316P_NL FDG6318PZ FDG6320C_NL FDG6322C FDG6323L_NL FDG6331L_NL FDG6335N FDG6342L Pg. 5 ...

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