FDG6335N Fairchild Semiconductor, FDG6335N Datasheet - Page 3

• Manufacturer Part Number: FDG6335N
• Description: MOSFET N-CH 20V 700MA SOT-363
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6335N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1609797

Results/Discussion
Test: (Autoclave)
Lot
Q20070416AAACLV
Q20070416ABACLV
Q20070416ACACLV
Q20070416BAACLV
Q20070416BBACLV
Q20070416BCACLV
Q20070416CAACLV
Q20070416DAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070416AAH3TRB
Q20070416ABH3TRB
Q20070416ACH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070416AAHTGB
Q20070416AAHTGB
Q20070416ABHTGB
Q20070416ABHTGB
Q20070416ACHTGB
Q20070416ACHTGB
Device
FDG313N
FDG313N
FDG313N
Device
FDG313N
FDG313N
FDG313N
FDG313N
FDG313N
FDG313N
Device
FDG313N
FDG313N
FDG313N
FDG6323L
FDG6323L
FDG6323L
FDG361N
NC7WZ17P6X
168-HOURS
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
0/77
Failure Code
Failure Code
Failure Code
Pg. 3