FDMA1032CZ Fairchild Semiconductor, FDMA1032CZ Datasheet

IC MOSFET N/P-CHAN MICROFET 2X2

FDMA1032CZ

Manufacturer Part Number
FDMA1032CZ
Description
IC MOSFET N/P-CHAN MICROFET 2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDMA1032CZ

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A, 3.1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
340pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.068 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
16 S, - 11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.7 A @ N Channel or 3.1 A @ P Channel
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
MicroFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1032CZTR

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FDMA1032CZ
20V Complementary PowerTrench MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
2010 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
R
Package Marking and Ordering Information
D
J
DS
GS
D
, T
JA
JA
JA
JA
Device Marking
STG
and
032
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
other
ultra-portable
MicroFET 2x2
FDMA1032CZ
– Continuous
– Pulsed
Device
D1 G2 S2
Parameter
D1
PIN 1
S1 G1
applications.
D2
D2
T
A
=25
o
It
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1d)
(Note 1c)
Features
HBM ESD protection level > 2 kV (Note 3)
Q1: N-Channel
3.7 A, 20V.
Q2: P-Channel
–3.1 A, –20V. R
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and antimony
oxides
S1
G1
D2
Q1
3.7
1
2
3
20
173 (Single Operation)
12
6
86 (Single Operation)
151 (Dual Operation)
69 (Dual Operation)
Tape width
R
R
R
–55 to +150
DS(ON)
DS(ON)
DS(ON)
DS(ON)
8mm
1.4
0.7
= 68 m
= 86 m
= 95 m
= 141 m
–3.1
Q2
–20
±12
–6
@ V
@ V
@ V
@ V
6
5
4
May 2010
GS
GS
GS
GS
= 4.5V
= 2.5V
= –4.5V
D1
G2
S2
3000 units
Quantity
= –2.5V
FDMA1032CZ Rev B4 (W)
Units
C/W
W
V
V
A
C
tm

Related parts for FDMA1032CZ

FDMA1032CZ Summary of contents

Page 1

... V = 4.5V DS(ON 2.5V DS(ON –4.5V DS(ON 141 –2.5V DS(ON Units 20 – ± 3.7 –3.1 6 –6 W 1.4 0.7 –55 to +150 C 86 (Single Operation) 173 (Single Operation) C/W 69 (Dual Operation) 151 (Dual Operation) Tape width Quantity 8mm 3000 units FDMA1032CZ Rev B4 (W) tm ...

Page 2

... GS GEN – – –4 GEN 3 4 –10 V,I =– 3 =– 4 Type Min Typ Max Units – mV – –1 All ± 0.6 1.0 1 –0.6 –1.0 –1.5 Q1 –4 mV 141 87 140 –11 Q1 340 pF Q2 540 120 100 0 1 2.4 FDMA1032CZ Rev B4 (W) ...

Page 3

... FR-4 material b)173 C/W when mounted on a minimum pad copper. Typ Max Units Q1 1 –1.1 Q1 0.7 1 –0.8 –1 guaranteed by design while R is determined by the d)151 C/W when o c)69 C/W when mounted mounted minimum pad pad copper. copper. FDMA1032CZ Rev B4 (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.0V 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 1.85A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDMA1032CZ Rev B4 ( 1.2 ...

Page 5

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 173°C 25°C A 0.01 0 100 1000 t , TIME (sec) 1 Dissipation. R ( =173 °C/W JA P(pk ( Duty Cycle 100 1000 FDMA1032CZ Rev B4 (W) 20 ...

Page 6

... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1.55A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD FDMA1032CZ Rev B4 ( 1.6 ...

Page 7

... Figure 21. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 173°C 25°C A 0.01 0 100 1000 t , TIME (sec) 1 Power Dissipation. R ( =173 °C/W JA P(pk ( Duty Cycle 100 1000 FDMA1032CZ Rev B4 (W) 20 ...

Page 8

... Dimensional Outline and Pad Layout FDMA1032CZ Rev B4 (W) ...

Page 9

... TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition F FDMA1032CZ Rev B4 (W) ®* ® Rev. I48 ...

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