FDMA1032CZ Fairchild Semiconductor, FDMA1032CZ Datasheet - Page 3

• Manufacturer Part Number: FDMA1032CZ
• Description: IC MOSFET N/P-CHAN MICROFET 2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA1032CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.068 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 16 S, - 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.7 A @ N Channel or 3.1 A @ P Channel
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1032CZTR

Notes:
1. R
user's board design.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
I
V
t
Q
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
S
rr
(a) R
(b) R
(c) R
(d) R
SD
rr
JA
is determined with the device mounted on a 1 in
JA
JA
JA
JA
= 86 °C/W when mounted on a 1 in
= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
= 69
= 151
Maximum Continuous Source-Drain Diode Forward Current
Source-Drain Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
o
C/W when mounted on a 1 in
o
C/W when mounted on a minimum pad of 2 oz copper. For dual operation.
Parameter
a)86
mounted on a 1
in
copper.
2
pad of 2 oz
o
C/W when
2
2
pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
2
V
V
Q1
I
Q2
I
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
F
F
GS
GS
= 3.7 A, dI
= –3.1 A, dI
= 0 V, I
= 0 V, I
b)173
mounted
minimum pad of 2
oz copper.
Test Conditions
T
A
o
C/W when
= 25°C unless otherwise noted
S
S
= 1.1 A
= –1.1 A
F
F
/dt = 100 A/μs
on
/dt = 100 A/μs
a
(Note 2)
(Note 2)
Type Min
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
c)69
mounted on a 1 in
pad of 2 oz copper.
JC
is guaranteed by design while R
o
C/W when
Typ Max Units
–0.8
0.7
11
25
2
9
2
–1.1
–1.2
1.1
1.2
JA
nC
ns
A
V
d)151
mounted on a
minimum pad of 2 oz
copper.
is determined by the
FDMA1032CZ Rev B4 (W)
o
C/W when