FDC6036P_F077 Fairchild Semiconductor, FDC6036P_F077 Datasheet
FDC6036P_F077
Specifications of FDC6036P_F077
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FDC6036P_F077 Summary of contents
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... R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information .036 FDC6036P 2009 Fairchild Semiconductor Corporation MOSFET Features • –5 A, – and thermal • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source BreakdownVoltage V DSS ∆BV Breakdown Voltage Temperature DSS Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
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Electrical Characteristics NOTES the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC ...
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Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC6036P Rev C3 (W) ...
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Typical Characteristics 20 V =-4.5V GS -2.5V 15 -2. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics -4.5V GS 1.3 1.2 1.1 1 0.9 ...
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Typical Characteristics -5A Vds = - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON 10ms 100ms 1s 1 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...