MOSFET P-CH DUAL 20V 5A 6SSOT

FDC6036P_F077

Manufacturer Part NumberFDC6036P_F077
DescriptionMOSFET P-CH DUAL 20V 5A 6SSOT
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDC6036P_F077 datasheet
 


Specifications of FDC6036P_F077

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs44 mOhm @ 5A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id1.5V @ 250µA
Gate Charge (qg) @ Vgs14nC @ 4.5VInput Capacitance (ciss) @ Vds992pF @ 10V
Power - Max900mWMounting TypeSurface Mount
Package / Case6-SSOT FLMP, SuperSOT-6 FLMPLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 1/7

Download datasheet (243Kb)Embed
Next
FDC6036P
P-Channel 1.8V Specified PowerTrench
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the R
DS(ON)
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
MOSFET Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
, T
Operating and Storage Junction Temperature Range
J
stg
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJC
Package Marking and Ordering Information
.036
FDC6036P
2009 Fairchild Semiconductor Corporation
MOSFET
Features
• –5 A, –20 V. R
and thermal
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low R
DS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
4
5
6
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
7’’
February 2009
= 44 mΩ @ V
= –4.5 V
DS(ON)
GS
R
= 64 mΩ @ V
= –2.5 V
DS(ON)
GS
R
= 95 mΩ @ V
= –1.8 V
DS(ON)
GS
Bottom Drain Contact
3
2
1
Bottom Drain Contact
Ratings
Units
–20
V
±8
V
–5
A
–20
1.8
W
1.8
0.9
°C
–55 to +150
68
°C/W
1
8mm
3000 units
FDC6036P Rev C3 (W)

FDC6036P_F077 Summary of contents

  • Page 1

    ... R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information .036 FDC6036P 2009 Fairchild Semiconductor Corporation  MOSFET Features • –5 A, – and thermal • Low gate charge, High Power and Current handling capability • High performance trench technology for extremely ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source BreakdownVoltage V DSS ∆BV Breakdown Voltage Temperature DSS Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate–Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

  • Page 3

    Electrical Characteristics NOTES the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC ...

  • Page 4

    Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC6036P Rev C3 (W) ...

  • Page 5

    Typical Characteristics 20 V =-4.5V GS -2.5V 15 -2. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics -4.5V GS 1.3 1.2 1.1 1 0.9 ...

  • Page 6

    Typical Characteristics -5A Vds = - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON 10ms 100ms 1s 1 ...

  • Page 7

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...