FDC6036P_F077 Fairchild Semiconductor, FDC6036P_F077 Datasheet - Page 2

• Manufacturer Part Number: FDC6036P_F077
• Description: MOSFET P-CH DUAL 20V 5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6036P_F077

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 992pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
gfs
Drain–Source Diode Characteristics and Maximum Ratings
I
V
trr
Qrr
Dynamic Characteristics
C
C
C
Rg
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSS
S
d(on)
r
d(off)
f
GS(th)
DS(on)
SD
∆T
∆T
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
J
J
Drain–Source BreakdownVoltage V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
D
D
F
iF
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
T
GS
= –5 A,
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
/d
A
= 25°C unless otherwise noted
= 0 V,
= –16 V,
= ±8 V,
= V
= –4.5 V,
= –2.5 V,
= –1.8 V,
= –4.5 V,I
= –5 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V,
t
= 15 mV
= 100 A/µs
Test Conditions
GS
,
I
S
D
= –1.25 A
= –5 A,T
V
f = 1.0 MHz
I
V
I
I
I
I
I
V
I
R
I
GS
D
D
D
D
D
D
D
D
DS
GS
GEN
= –250 µA
= –250 µA
= –5.0 A
= –4.0 A
= –3.2 A
= –5 A
= –1 A,
= –5 A,
= 0 V
= 0 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–20
Typ
–0.7
–0.7
–24
4.4
7.8
992
169
37
52
74
51
16
19
8.6
1.7
2.0
85
12
10
40
20
10
–1.25
Max
±100
–1.5
–1.2
–1
44
64
95
61
24
20
64
36
14
FDC6036P Rev C3 (W)
Units
mV/°C
mV/°C
mΩ
µA
nA
pF
pF
Ω
nC
nC
nC
nC
pF
ns
ns
ns
ns
ns
V
V
S
A
V