NDS9958 Fairchild Semiconductor, NDS9958 Datasheet

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NDS9958

Manufacturer Part Number
NDS9958
Description
MOSFET N+P 20V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9958

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
525pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NDS9958TR

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Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
_______________________________________________________________________________
D
J
DSS
GSS
D
NDS9958
Dual N & P-Channel Enhancement Mode Field Effect Transistor
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management, Half bridge motor
control, cellular phone, and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
General Description
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous T
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Continuous T
- Pulsed
T
A
A
= 70°C
= 25°C
A
= 25°C
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1)
Features
N-Channel 3.5A, 20V, R
P-Channel -3.5A , -20V, R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
N-Channel
± 3.5
± 2.8
± 20
± 14
20
6
5
8
7
-55 to 150
1.6
0.9
78
40
2
1
DS(ON)
DS(ON)
= 0.1
= 0.1
P-Channel
± 3.5
± 2.8
± 20
± 14
-20
@ V
@ V
GS
DS(ON)
GS
4
3
2
1
= 10V.
February 1996
= -10V.
.
NDS9958.SAM
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS9958

NDS9958 Summary of contents

Page 1

... A N-Channel ± 25°C ± 3.5 (Note 1a) A ± 2.8 (Note 1a) ± 14 (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1996 = 0 10V. DS(ON 0 -10V. DS(ON) GS DS(ON P-Channel 20 -20 ± 20 ± 3.5 ± 2.8 ± 1.6 1 0.9 -55 to 150 Units °C °C/W °C/W NDS9958.SAM ...

Page 2

... N-Ch 0.062 0.1 0.085 0.14 P-Ch 0.08 0.1 0.11 0.16 N-Ch 0.073 0.12 P-Ch 0.112 0.12 N-Ch 0.08 0.15 P-Ch 0.165 0.19 N- P-Ch -14 N-Ch 3.5 P-Ch -2.5 N- P-Ch 5 N-Ch 525 pF P-Ch 785 N-Ch 315 pF P-Ch 500 N-Ch 185 pF P-Ch 245 NDS9958.SAM ...

Page 3

... GEN N-Channel 3 P-Channel 1.7 A (Note -1.7 A (Note 0V 3 100 A/µ Type Min Typ Max Units N-Ch 1 N-Ch 1.7 P-Ch -1.7 N-Ch 0.86 1.2 P-Ch -0.9 -1.2 N-Ch 100 P-Ch 100 is guaranteed NDS9958.SAM ...

Page 4

... Figure 6. Gate Threshold Variation with V = 3.5V GS 4.0 4 DRAIN CURRENT (A) D and Drain Current 125°C J 25°C -55° DRAIN CURRENT (A) D Current and Temperature 250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. 5.0 6 125 150 NDS9958.SAM ...

Page 5

... Figure 8. Body Diode Forward Voltage Variation 3. iss oss 2 C rss Figure 10. Gate Charge Characteristics. 125° 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature = 10V GATE CHARGE (nC) g 1.2 16 NDS9958.SAM ...

Page 6

... Figure 17. Gate Threshold Variation with . = -4.0V -4.5 -5.0 -5.5 -6.0 -7 -12 - DRAIN CURRENT (A) D Voltage and Drain Current -10V 125°C J 25°C -5 -10 - DRAIN CURRENT ( -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -8.0 -10 -20 -55°C -20 GS 125 150 NDS9958.SAM ...

Page 7

... C oss - rss - Figure 21. Gate Charge Characteristics T = -55°C J 25°C 125°C -12 - 125°C J 25°C -55°C 0.6 0.9 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature V = -5V = -3.5A DS -10V GATE CHARGE (nC) g 1.8 -15V 2 0 NDS9958.SAM ...

Page 8

... Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design GEN G S Figure 25 P-Channel Switching Test Circuit (continued TIME (sec d(on OUT ( See Note 1c JA P(pk ( Duty Cycle off t t d(off PULSE WIDTH Figure 26 P-Channel Switching Waveforms NDS9958.SAM t f ...

Page 9

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 10

... Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0 ...

Page 11

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...

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