NDS9958 Fairchild Semiconductor, NDS9958 Datasheet - Page 4

• Manufacturer Part Number: NDS9958
• Description: MOSFET N+P 20V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9958

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 525pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9958TR

Typical Electrical Characteristics: N-Channel
1 0
8
6
4
2
0
1 8
1 2
1.6
1.4
1.2
0.8
0.6
1
6
0
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
0
-50
Figure 1. On-Region Characteristics.
V
DS
= 10V
with Temperature.
V
V
-25
I
1.5
GS
D
G S
= 3.5A
= 10V
= 10V
V
GS
V
0
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
2
, DRAIN-SOURCE VOLTAGE (V)
6.0 5.0
1
2 5
2.5
4.5
5 0
T = -55°C
J
4.0
7 5
3
2
3.5
100
2 5
3.0
2.5
1 2 5
3.5
125
150
4
3
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
1.8
1.6
1.4
1.2
0.8
1
2
1
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate Voltage
-50
2
1
0
0
V
Current and Temperature.
Temperature.
GS
and Drain Current.
-25
= 10 V
3
2
0
T , JUNCTION TEMPERATURE (°C)
J
I
I
D
D
2 5
, DRAIN CURRENT (A)
V
, DRAIN CURRENT (A)
GS
6
4
= 3.5V
T = 125°C
5 0
J
9
6
7 5
25°C
-55°C
4.0
100
I
V
D
DS
4.5
12
= 250µA
8
= V
5.0
6.0
125
1 0
GS
NDS9958.SAM
150
1 0
15