FQN1N50CTA Fairchild Semiconductor, FQN1N50CTA Datasheet
FQN1N50CTA
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FQN1N50CTA Summary of contents
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... Symbol Parameter R Thermal Resistance, Junction-to-Lead θJL R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQN1N50C Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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Package Marking and Ordering Information Device Marking Device 1N50C FQN1N50C Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area -1 ...
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Unclamped Inductive Switching Test Circuit & Waveforms FQN1N50C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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Peak Diode Recovery dv/dt Test Circuit & Waveforms FQN1N50C Rev www.fairchildsemi.com ...
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Mechanical Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 FQN1N50C Rev. A TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 ] [1.27 ] 3.60 ±0.20 (R2.29) 7 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...