FQN1N50CTA Fairchild Semiconductor, FQN1N50CTA Datasheet - Page 4

• Manufacturer Part Number: FQN1N50CTA
• Description: MOSFET N-CH 500V 380MA TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N50CTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 380mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 195pF @ 25V
• Power - Max: 890mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.38 A
• Power Dissipation: 890 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQN1N50CTA

FQN1N50C Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
-3
1
0
10
-100
0
Operation in This Area
is Limited by R
-50
vs. Temperature
DS(on)
V
T
DS
J
, Junction Temperature [
10
, Drain-Source Voltage [V]
0
1
1 0
1 0
1 0
1 0
-1
2
1
0
1 0
-5
※
1. T
2. T
3. Single Pulse
50
D = 0 .5
Notes :
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
C
J
= 150
= 25
DC
Figure 11. Transient Thermal Response Curve
1 0
o
C
o
C
-4
100 ms
100
10
2
o
C]
10 ms
※
t
1
1. V
2. I
s in g le p u ls e
1 ms
Notes :
1 0
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
D
GS
= 250 µA
100
-3
150
= 0 V
µ
10
s
µ
s
1 0
200
10
-2
(Continued)
3
4
1 0
-1
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
25
1 0
-100
※
P
0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
N o te s :
θ
J M
J L
(t) = 6 0
- T
-50
1 0
L
50
t
1
= P
t
1
vs. Case Temperature
2
℃
D M
T
/W M a x .
T
* Z
J
vs. Temperature
C
, Junction Temperature [
, Case Temperature [ ]
q J C
0
1
1 0
/t
(t)
75
2
2
50
1 0
100
3
100
℃
o
C]
125
※
1. V
2. I
Notes :
150
D
GS
= 0.19 A
= 10 V
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150
200