FDN5630 Fairchild Semiconductor, FDN5630 Datasheet

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... C unless otherwise noted A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Device Reel Size FDN5630 7 March 2000 = 0.100 @ DS(ON 0.120 @ DS(ON provides low R in SOT23 footprint. DS(ON Ratings Units 1 0.5 W 0.46 -55 to +150 C 250 C/W 75 C/W Tape Width Quantity 8mm 3000 units FDN5630 Rev. C ...

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... MHz GEN 1 0.42 A (Note determined by the user's board design 270 C/W when mounted on a minimum pad. Min Typ Max Units mV 100 nA -100 6.9 mV/ C 0.073 0.100 0.127 0.180 0.083 0.120 400 pF 102 1.6 nC 1.2 nC 0.42 A 0.72 1.2 V FDN5630 Rev. C ...

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... Gate-to-Source Voltage - 125 C 1 0.1 0.01 0.001 Figure 6. Body Diode Forward Voltage Variation with Source Current = 4.5V 5.0V 6.0V 7.0V 10V DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE ( =125 -55 C 0.2 0.4 0.6 0 BODY DIODE VOLTAGE (V) SD and Temperature. FDN5630 Rev 1.2 ...

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... Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design 1MHz OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE o R =270 C = 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 270 C/W JA P(pk ( Duty Cycle 100 300 FDN5630 Rev 1000 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...