FDN5630 Fairchild Semiconductor, FDN5630 Datasheet - Page 4

• Manufacturer Part Number: FDN5630
• Description: MOSFET N-CH 60V 1.7A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN5630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN5630TR

Typical Characteristics
10
0.01
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
I
D
R
DS(ON)
SINGLE PULSE
= 1.7A
R
0.005
0.002
0.001
0.05
0.02
0.01
JA
V
T
0.5
0.2
0.1
0.0001
GS
A
= 270
1
LIMIT
= 25
= 10V
D = 0.5
o
o
C/W
C
2
V
0.2
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
0.05
1
g
, GATE CHARGE (nC)
0.02
0.01
DC
0.001
Single Pulse
10s
4
1s
Figure 11. Transient Thermal Response Curve.
100ms
V
DS
= 10V
10ms
(continued)
10
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
1ms
6
100 s
0.01
30V
20V
100
8
0.1
t , TIME (sec)
1
20
16
12
600
500
400
300
200
100
0.0001
8
4
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
0.001
ISS
1
10
C
OSS
V
Power Dissipation.
C
DS
0.01
RSS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
20
0.1
P(pk)
10
30
T - T
R
Duty Cycle, D = t /t
J
R
JA
1
t
JA
1
A
(t) = r(t) * R
t
= P * R
2
= 270 C/W
40
SINGLE PULSE
R
10
JA
T
=270
A
JA
100
=25
1
JA
(t)
2
o
o
50
C/W
C
100
V
f = 1MHz
GS
= 0 V
300
FDN5630 Rev. C
1000
60