FDS8882 Fairchild Semiconductor, FDS8882 Datasheet

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... FDS8882 ©2008 Fairchild Semiconductor Corporation FDS8882 Rev.C ® MOSFET General Description = 9 A The FDS8882 has been designed to minimize losses in power D conversion application. Advancements in both silicon and = 8 A package technologies have been combined to offer the lowest D r while maintaining excellent switching performance. ...

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... NOTES determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting ° mH ©2008 Fairchild Semiconductor Corporation FDS8882 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...

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... Figure 3. Normalized On Resistance vs Junction Temperature 21 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS8882 Rev °C unless otherwise noted J 3.0 2.5 2.0 1 1.0 µ s 0.5 1.5 2 100 125 150 ...

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... Switching Capability 100 THIS AREA IS LIMITED BY r DS(on SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS8882 Rev °C unless otherwise noted J 2000 1000 100 = 100 ...

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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2008 Fairchild Semiconductor Corporation FDS8882 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NTES: DUTY FACTOR ...

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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDS8882 Rev.C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...