FDS8882 Fairchild Semiconductor, FDS8882 Datasheet - Page 2

• Manufacturer Part Number: FDS8882
• Description: MOSFET N-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns
• Rise Time: 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8882TR

©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
∆T
∆T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 8 A, V
Parameter
DD
= 27 V, V
a) 50 °C/W when mounted on a
1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
GS
= 25 °C unless otherwise noted
pad of 2 oz copper.
= 10 V.
I
I
V
V
V
V
I
V
I
V
V
V
V
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
GS
GS
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 9 A, di/dt = 100 A/µs
= 250 µA, V
= 250 µA, referenced to 25 °C
= 250 µA, referenced to 25 °C
= 0 V, I
= 0 V, I
= 24 V, V
= ±20 V, V
= 0 V to 10 V
= 0 V to 5 V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= 10 V, R
DS
2
Test Conditions
, I
S
S
D
D
D
= 9 A
= 2.1 A
D
D
D
GS
GS
= 9 A
GEN
GS
= 9 A,
DS
= 250 µA
= 9 A
= 8 A
= 9 A, T
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 9 A
J
= 15 V,
=125 °C
θJC
is guaranteed by design while R
Min
1.0
30
b) 125 °C/W when mounted on a
minimum pad.
13.2
16.6
18.5
707
138
Typ
1.7
1.8
2.2
2.8
0.8
0.7
36
88
19
14
17
-6
6
7
3
4
8
4
±100
20.0
22.5
28.0
Max
940
185
135
θCA
3.0
1.2
1.2
14
10
35
10
20
31
12
11
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
µA
nA
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
Ω
V
V