FDD6635 Fairchild Semiconductor, FDD6635 Datasheet

MOSFET N-CH 35V 15A DPAK

FDD6635

Manufacturer Part Number
FDD6635
Description
MOSFET N-CH 35V 15A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6635

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 20V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohms
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
59 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6635TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
35 000
Part Number:
FDD6635
Manufacturer:
FAIRCHILD
Quantity:
8 200
FDD6635
35V N-Channel PowerTrench
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
Absolute Maximum Ratings
Symbol
V
V
V
I
E
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
DS(Avalanche)
GSS
AS
D
θJC
θJA
θJA
, T
Device Marking
STG
FDD6635
Single Pulse Avalanche Energy
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum)
Gate-Source Voltage
Continuous Drain Current @T
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
G
S
(TO-252)
D-PAK
TO-252
FDD6635
Device
Parameter
@T
Pulsed
@T
@T
@T
D
®
C
A
C
A
A
=25°C
=25°C
=25°C
=25°C
=25°C
MOSFET
T
A
=25
D-PAK (TO-252)
o
C unless otherwise noted
Package
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(
(Note 4)
(Note 3)
(Note 3)
(Note 1)
Note 5
Features
• 59 A, 35 V
• Fast Switching
• RoHS compliant
)
Reel Size
13’’
R
R
–55 to +150
DS(ON)
DS(ON)
Ratings
G
±20
100
3.8
1.6
2.7
113
35
40
59
15
55
40
96
= 10 mΩ @ V
= 13 mΩ @ V
Tape width
12mm
S
D
February 2007
www.fairchildsemi.com
GS
GS
= 10 V
= 4.5 V
2500 units
Quantity
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
V
A
tm

Related parts for FDD6635

FDD6635 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device FDD6635 FDD6635 ©2007 Fairchild Semiconductor Corporation FDD6635 Rev. C2(W) ® MOSFET Features • • Fast Switching • RoHS compliant =25 C unless otherwise noted A (Note 4) =25° ...

Page 2

... Turn–Off Delay Time d(off) t Turn–Off Fall Time f Q Total Gate Charge (TOT Total Gate Charge Gate–Source Charge gs Q Gate–Drain Charge gd FDD6635 Rev. C2( 25°C unless otherwise noted A Test Conditions = 250 μ 250 μA, Referenced to 25° ±20 V, ...

Page 3

... P is maximum power dissipation 25°C and BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. 5. Starting T = 25° 1mH 15A 35V FDD6635 Rev. C2( 25°C unless otherwise noted A Test Conditions diF/dt = 100 A/µs is determined by the user's board design. ...

Page 4

... JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature =- 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD6635 Rev. C2(W) 2.4 2 3.5V 1.8 1.6 1.4 1.2 3. 2.5 3 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.029 0.025 0.021 0.017 0.013 ...

Page 5

... 0.01 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 100 0 TIME (sec) 1 Figure 11. Single Pulse Maximum Peak Current FDD6635 Rev. C2(W) 2000 15V 1600 20V 1200 800 400 Figure 8. Capacitance Characteristics 100 100µs 80 1ms 10ms 100ms 100 0.01 Figure 10. Single Pulse Maximum ...

Page 6

... SINGLE PULSE 0.001 0.001 0.01 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6635 Rev. C2(W) 0 TIME (sec ( θJA θ ° ...

Page 7

... DUT DUT I I g(REF) g(REF) Figure 16. Gate Charge Test Circuit GEN GEN Pulse Width ≤ 1μs Pulse Width ≤ 1μs Duty Cycle ≤ 0.1% Duty Cycle ≤ 0.1% Figure 18. Switching Time Test Circuit FDD6635 Rev. C2( Figure 15. Unclamped Inductive Waveforms 10V 10V + + ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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