FDD6635 Fairchild Semiconductor, FDD6635 Datasheet - Page 2

• Manufacturer Part Number: FDD6635
• Description: MOSFET N-CH 35V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 20V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6635TR

FDD6635 Rev. C2(W)
g
R
Electrical Characteristics
Symbol
Off Characteristics
BV
ΔBV
I
I
On Characteristics
V
ΔV
R
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Q
DSS
GSS
d(on)
r
d(off)
f
FS
GS(th)
DS(on)
iss
oss
rss
G
ΔT
ΔT
g (TOT)
g
gs
gd
GS(th)
DSS
DSS
J
J
Forward Transconductance
Gate Resistance
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge, V
Total Gate Charge, V
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
GS
GS
(Note 2)
= 10V
= 5V
V
V
V
I
V
V
V
I
V
V
V
V
f = 1.0 MHz
V
V
V
T
D
D
DS
GS
A
GS
DS
GS
DS
GS
GS
GS
DS
DD
GS
DS
= 250 μA, Referenced to 25°C
= 250 μA, Referenced to 25°C
= 25°C unless otherwise noted
= 5 V,
= 0 V,
= 28 V,
= ±20 V,
= V
= 10 V,
= 4.5 V,
= 10 V,
= 20 V,
= 15 mV,
= 20 V,
= 10 V,
= 20 V, I
Test Conditions
GS
,
D
I
I
I
I
I
= 15 A
V
D
D
D
D
D
f = 1.0 MHz
V
I
V
D
GS
= 250 μA
= 15 A
= 13 A
= 15 A, T
= 15 A
I
R
DS
D
= 250 μA
GS
GEN
= 0 V
= 1 A,
= 0 V
= 0 V,
= 6 Ω
J
=125°C
Min Typ Max Units
35
1
1400
10.2
12.4
317
137
1.9
8.2
1.4
3.9
5.3
32
–5
53
11
28
14
26
13
6
www.fairchildsemi.com
±100
10
13
16
20
12
45
25
36
18
1
3
mV/°C
mV/°C
mΩ
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S