FDB8453LZ Fairchild Semiconductor, FDB8453LZ Datasheet

MOSFET N-CH 40V 16.1A TO-263AB

FDB8453LZ

Manufacturer Part Number
FDB8453LZ
Description
MOSFET N-CH 40V 16.1A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8453LZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 17.6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
16.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
3545pF @ 20V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
84 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16.1 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8453LZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8453LZ
Manufacturer:
Fairchild Semiconductor
Quantity:
1 800
©2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
FDB8453LZ
N-Channel PowerTrench
40V, 50A, 7.0mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
, T
Symbol
Device Marking
STG
FDB8453LZ
DS(on)
DS(on)
G
= 7.0mΩ at V
= 9.0mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
GS
GS
= 10V, I
= 4.5V, I
FDB8453LZ
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
TO-263AB
FDB Series
D
D
D
= 17.6A
= 14.9A
T
®
C
= 25°C unless otherwise noted
MOSFET
Parameter
TO-263AB
Package
1
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
A
C
C
C
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Inverter
Power Supplies
G
Reel Size
330mm
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
S
Tape Width
24mm
-55 to +150
Ratings
16.1
1.88
±20
100
253
3.1
40
50
74
66
40
®
process that has
August 2007
www.fairchildsemi.com
Quantity
800 units
Units
°C/W
mJ
°C
W
V
V
A
tm

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FDB8453LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDB8453LZ FDB8453LZ ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 ® MOSFET General Description = 17.6A This N-Channel MOSFET is produced using Fairchild D Semiconductor’s advanced PowerTrench = 14.9A D been especially tailored to minimize the on-state resistance and switching loss ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 13A The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25°C ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 100 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev. 25°C unless otherwise noted J µ 3. 1.2 1.6 2 100 125 150 4.0 PULSE DURATION = 80 DUTY CYCLE = 0 ...

Page 4

... Figure 9. Unclamped Inductive Switching Capability Limited by Package 1.88 C/W θ CASE TEMPERATURE ( , T C Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev. 25°C unless otherwise noted J 4000 = 15V 1000 V = 25V 100 1000 Figure 10 10V GS = 4.5V 100 125 ...

Page 5

... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 1.88 θ JC 0.005 - ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev. 25°C unless otherwise noted PULSE WIDTH ( RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve 5 SINGLE PULSE 1.88 C/W θ ...

Page 6

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDB8453LZ Rev.C1 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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