FDS2734 Fairchild Semiconductor, FDS2734 Datasheet
FDS2734
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FDS2734 Summary of contents
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... Thermal Resistance, Junction -to- Case θJC Package Marking and Ordering Information Device Marking Device FDS2734 FDS2734 ©2006 Fairchild Semiconductor Corporation FDS2734 Rev. B ® MOSFET General Descriptions This single N-Channel MOSFET is produced using = 3.0A D Fairchild Semiconductor’s advanced UItraFET Trench process that has been especially tailored to minimize = 2 ...
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... R is guaranteed by design while R θJC a) 50°C/W when mounted on a 1in pad copper µs, 2: Pulse Test Width <300 Duty Cycle <2%. ° 3: Starting 1mH 5A 100V FDS2734 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced 200V ...
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... JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 20 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS2734 Rev 25°C unless otherwise noted J 2.5 2.0 1.5 1.0 µ Figure 2. 0.4 0.3 0.2 0.1 0.0 75 100 125 150 3 ...
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... OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED J LIMITED DS(on DRAIN TO SOURCE VOLTAGE (V) DS Forward Bias Safe Operating Area Figure 11. FDS2734 Rev 25°C unless otherwise noted J 5000 1000 V = 125V 200V DD 100 10 0 Figure 8. 3.5 3.0 2 2.0 J 1.5 1.0 0.5 R 0.0 10 100 25 Figure 10 ...
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... SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design FDS2734 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION( ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...