FDS2734 Fairchild Semiconductor, FDS2734 Datasheet - Page 3

• Manufacturer Part Number: FDS2734
• Description: MOSFET N-CH 250V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2734

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 117 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2610pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.097 Ohms
• Forward Transconductance Gfs (max / Min): 15.1 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS2734TR

FDS2734 Rev. B
Typical Characteristics
Figure 3. Normalized
50
40
30
20
10
2.8
2.4
2.0
1.6
1.2
0.8
0.4
20
15
10
0
5
0
Figure 1. On Region Characteristics
-50
0
2
Figure 5. Transfer Characteristics
V
V
GS
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
D
GS
- Descending Order
= 10V
= 3.0A
-25
= 10V
8V
6V
5V
V
V
T
GS
2
DS
J
, JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
3
0
Temperature
T
J
= 150
25
On Resistance vs Junction
4
o
µ
C
s
50
4
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
T
75
J
= 25°C unless otherwise noted
100
5
(
T
T
8
o
J
J
C
= -55
= 25
)
125
o
µ
o
C
C
s
10
150
6
3
Figure 6.
Figure 2.
Figure 4.
100
0.4
0.3
0.2
0.1
0.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.0
0
3
V
Source to Drain Diode Forward Voltage
GS
T
V
J
V
Current and Gate Voltage
SD
Normalized On-Resistance vs Drain
V
0.2
= 0V
= 25
GS
4
On-Resistance vs Gate to Source
GS
, BODY DIODE FORWARD VOLTAGE (V)
= 4.5V
10
, GATE TO SOURCE VOLTAGE (V)
o
vs Source Current
I
C
D
T
, DRAIN CURRENT(A)
J
0.4
5
= 150
Voltage
I
V
D
GS
o
=3A
20
C
0.6
= 5V
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
J
GS
= 25
0.8
T
7
= 6V
30
J
= 150
o
V
C
T
GS
J
www.fairchildsemi.com
= -55
1.0
= 8V
o
8
C
V
o
GS
40
C
= 10V
1.2
9
µ
µ
s
s
50
10
1.4