FDMS2572 Fairchild Semiconductor, FDMS2572 Datasheet - Page 4

• Manufacturer Part Number: FDMS2572
• Description: MOSFET N-CH 150V 4.5A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDMS2572

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2610pF @ 75V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2572TR

FDMS2572 Rev.C2
Typical Characteristics
1E-3
0.01
10
0.1
Figure 7.
10
60
8
6
4
2
0
6
5
4
3
2
1
0.01
1
0.1
0
Figure 9.
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 11. Forward Bias Safe
I
D
= 4.5A
V DS , DRAIN to SOURCE VOLTAGE (V)
Switching Capability
7
Gate Charge Characteristics
t
Operating Area
AV
DS(on)
0.1
Unclamped Inductive
Q
1
, TIME IN AVALANCHE(ms)
g
, GATE CHARGE(nC)
14
SINGLE PULSE
T J = MAX RATED
T A = 25
T
V
J
DD
= 125
10
=50V
1
O
T
C
o
J
21
C
V
= 25°C unless otherwise noted
DD
= 100V
T
V
J
DD
100
28
= 25
10
= 75V
o
C
100us
1ms
10ms
100ms
1s
10s
DC
50
600
35
4
3000
1000
1000
2000
100
100
0.5
10
10
Figure 10.
6
5
4
3
2
1
0
10
1
25
0.1
Figure 12.
-3
Current vs Ambient Temperature
Figure 8.
f = 1MHz
V
GS
R
θ
JA
10
= 0V
T
V
A
V
= 50
-2
50
DS
, AMBIENT TEMPERATURE
SINGLE PULSE
GS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
o
= 10V
t, PULSE WIDTH (s)
Single Pulse Maximum
Capacitance vs Drain
C/W
V
10
GS
1
-1
= 6V
75
V
GS
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
0
= 10V
100
25
10
10
o
C DERATE PEAK
150 T
---------------------- -
1
125
( o
–
125
C
C
C
C
www.fairchildsemi.com
A
oss
)
10
rss
iss
T
A
2
= 25
o
C
150
10
100
3