FDMS86101 Fairchild Semiconductor, FDMS86101 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single FDMS86101
Manufacturer Part Number
FDMS86101
Description
MOSFET N-CH 100V 12.4A POWER56
Manufacturer
Fairchild Semiconductor
Specifications of FDMS86101
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 50V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.4 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
FAIRCHILD/仙童
Manufacturer:
FAIRCHILD/仙童
©2010 Fairchild Semiconductor Corporation
FDMS86101 Rev.C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86101
N-Channel PowerTrench
100 V, 60 A, 8 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
100% Rg tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS86101
DS(on)
DS(on)
= 8 mΩ at V
= 13.5 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10 V, I
Power 56
FDMS86101
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 6 V, I
Device
D
= 13 A
D
D
= 9.5 A
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
Package
DS(on)
S
S
1
S
T
T
T
T
T
Pin 1
G
C
C
C
A
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC-DC Conversion
N-Channel
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
MOSFET
5
6
7
8
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
12.4
100
±20
200
135
104
2.5
1.2
60
80
50
®
process thant has
October 2010
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A
Related parts for FDMS86101
FDMS86101 Summary of contents
... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86101 FDMS86101 ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev.C3 ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 9.5 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...
... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting 0.3 mH ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...
... T J Figure 3. Normalized On Resistance vs Junction Temperature 200 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 100 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev. °C unless otherwise noted J μ 5 4 100 125 150 100 ...
... THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED J 0. 125 C/W θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev. °C unless otherwise noted J 10000 1000 DD 100 100 ...
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 R θ JA 0.0005 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev. °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...
... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev.C3 6 www.fairchildsemi.com ...
... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS86101 Rev.C3 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...
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