FDMS86101 Fairchild Semiconductor, FDMS86101 Datasheet - Page 2

• Manufacturer Part Number: FDMS86101
• Description: MOSFET N-CH 100V 12.4A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS86101

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 50V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS86101TR

©2010 Fairchild Semiconductor Corporation
FDMS86101 Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.3 mH, I
AS
= 30 A, V
Parameter
DD
= 75 V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 50 °C/W when mounted on a
= 25 °C unless otherwise noted
1 in
GS
2
= 10 V
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 13 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 80 V, V
= 10 V, I
= 10 V, I
= 50 V, V
= 0 V, I
= 0 V, I
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
D
= 2.1 A
= 13 A
= 9.5 A
GS
GS
GEN
GS
= 250 μA
= 13 A, T
= 13 A
= 13 A
= 13 A,
DS
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 13 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 125 °C/W when mounted on a
100
Min
2.0
minimum pad of 2 oz copper.
2255
10.8
10.9
460
0.7
0.8
Typ
9.5
2.9
6.3
8.4
1.0
56
61
30
15
11
27
39
22
45
66
-9
7
3000
Max
13.5
610
800
100
1.2
1.3
3.0
θCA
4.0
27
20
44
13
55
31
90
98
45
14
www.fairchildsemi.com
8
is determined by
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
S
Ω
V
V