MOSFET N-CH 250V 33A TO-220F

FDPF33N25T

Manufacturer Part NumberFDPF33N25T
DescriptionMOSFET N-CH 250V 33A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF33N25T datasheets
 

Specifications of FDPF33N25T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs94 mOhm @ 16.5A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C33AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs48nC @ 10VInput Capacitance (ciss) @ Vds2135pF @ 25V
Power - Max37WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id20ADrain Source Voltage Vds250V
On Resistance Rds(on)94mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ5VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)0.077 Ohms
Forward Transconductance Gfs (max / Min)26.6 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current20 A
Power Dissipation37 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP33N25 / FDPF33N25
250V N-Channel MOSFET
Features
• 33A, 250V, R
= 0.094Ω @V
DS(on)
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP33N25 / FDPF33N25 Rev. B
Description
= 10 V
These N-Channel enhancement mode power field effect
GS
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
April 2007
UniFET
D
G
S
FDP33N25
FDPF33N25
Unit
250
33
33*
20.4
20.4*
132
132*
± 30
918
33
23.5
4.5
235
37
1.89
0.29
-55 to +150
300
FDP33N25
FDPF33N25
0.53
3.4
0.5
--
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W

FDPF33N25T Summary of contents

  • Page 1

    ... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP33N25 / FDPF33N25 Rev. B Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    Package Marking and Ordering Information Device Marking Device FDP33N25 FDP33N25 FDPF33N25 FDPF33N25 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current DSS I ...

  • Page 3

    Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

  • Page 4

    Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9-1. Maximum Safe Operating Area for FDP33N25 Operation in ...

  • Page 5

    Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP33N25 Figure 11-2. Transient Thermal Response Curve for FDPF33N25 FDP33N25 / FDPF33N25 Rev. B (Continued) 0 D=0.5 0.2 -1 0.1 0.05 0.02 * Notes ...

  • Page 6

    Unclamped Inductive Switching Test Circuit & Waveforms FDP33N25 / FDPF33N25 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    FDP33N25 / FDPF33N25 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    Mechanical Dimensions FDP33N25 / FDPF33N25 Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP33N25 / FDPF33N25 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...