FDC655BN Fairchild Semiconductor, FDC655BN Datasheet

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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .55B FDC655BN ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 General Description = 6.3 A This N-Channel Logic Level MOSFET D Fairchild Semiconductor’s advanced PowerTrench = 5 that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

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... FR-4 board. b. 156 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%. ©2010 Fairchild Semiconductor Corporation FDC655BN Rev. 25°C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25°C ...

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... J Figure 3. Normalized On Resistance vs Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDC655BN Rev. 25°C unless otherwise noted 3 µ s 1.5 2 100 125 150 100 0.1 ...

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... DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0003 - Figure 11. ©2010 Fairchild Semiconductor Corporation FDC655BN Rev. 25°C unless otherwise noted J 1000 100 1000 100 100 0.1 10 100 ...

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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDC655BN Rev.C2 ® FlashWriter * PDP SPM™ FPS™ Power-SPM™ F-PFS™ PowerTrench ® FRFET PowerXS™ ...