FDC655BN Fairchild Semiconductor, FDC655BN Datasheet - Page 4

• Manufacturer Part Number: FDC655BN
• Description: MOSFET N-CH 30V 6.3A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC655BN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC655BN

©2010 Fairchild Semiconductor Corporation
FDC655BN Rev.C2
Typical Characteristics
0.01
100
0.1
10
10
1
0.01
0.0003
Figure 7.
8
6
4
2
0
0.001
0.01
0
0.1
THIS AREA IS
LIMITED BY r
2
1
I
10
D
Figure 9. Forward Bias Safe
= 6.3 A
SINGLE PULSE
T
R
T
-4
J
A
θ
JA
= MAX RATED
= 25
V
= 156
DS
2
Gate Charge Characteristics
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.1
, DRAIN to SOURCE VOLTAGE (V)
o
Operating Area
C
DS(on)
0.2
0.1
0.05
0.02
0.01
Q
o
Figure 11.
C/W
g
V
, GATE CHARGE (nC)
DD
10
4
= 10 V
-3
V
1
DD
= 20 V
T
Junction-to-Ambient Transient Thermal Response Curve
SINGLE PULSE
R
J
6
θ
JA
= 25°C unless otherwise noted
V
= 156
DD
10
= 15 V
10
o
-2
C/W
8
10 ms
1 s
1 ms
100 ms
10 s
DC
t, RECTANGULAR PULSE DURATION (sec)
100
10
10
-1
4
1000
1000
100
100
0.1
10
10
1
1
0.1
10
Figure 10.
-4
Figure 8.
f = 1 MHz
V
GS
10
= 0 V
-3
V
V
DS
Power Dissipation
to Source Voltage
NOTES:
DUTY FACTOR: D = t
PEAK T
GS
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
Single Pulse Maximum
= 10 V
10
10
t, PULSE WIDTH (sec)
-2
J
= P
1
10
DM
-1
x Z
P
θJA
DM
1
/t
1
x R
2
100
θJA
SINGLE PULSE
R
T
t
1
A
θ
+ T
10
JA
t
= 25
2
A
= 156
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10
o
C
C
100
C
C
o
iss
oss
C/W
rss
1000
1000
30