NDS9405 Fairchild Semiconductor, NDS9405 Datasheet

MOSFET P-CH 20V 4.3A 8-SOIC

NDS9405

Manufacturer Part Number
NDS9405
Description
MOSFET P-CH 20V 4.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9405

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1425pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NDS9405TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDS9405
Manufacturer:
NS
Quantity:
2 722
____________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
J
DSS
GSS
D
NDS9405
Single P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
N
General Description
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous T
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Continuous T
- Pulsed
T
A
A
T
= 25°C unless otherwise noted
= 25°C
A
A
= 25°C
= 70°C
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
-4.3A, -20V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
5
6
7
8
DS(ON)
NDS9405
-55 to 150
± 4.3
± 3.3
± 20
± 20
1.2
-20
2.5
50
25
= 0.10
1
@ V
GS
= -10V
4
3
2
1
DS(ON)
February 1996
NDS9405.SAM
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS9405

NDS9405 Summary of contents

Page 1

... A = 70°C (Note 1a 25°C A (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1996 = 0. -10V GS DS(ON) DS(ON NDS9405 -20 ± 20 ± 4.3 ± 3.3 ± 20 2.5 1.2 1 -55 to 150 50 25 Units °C °C/W °C/W NDS9405.SAM ...

Page 2

... I = -250 µ 125° - 125° -4 125° - - 1.0 MHz GEN GEN Min Typ Max Units - µA -25 µA 100 nA -100 nA -0.5 -1. -0.85 -2.6 0.053 0.1 0.075 0.15 0.08 0.16 0.12 0.24 - 1425 pF 850 pF 430 200 ns 30 200 NDS9405.SAM ...

Page 3

... C/W when mounted on a 0.04 in pad of 2oz cpper 125 C/W when mounted on a 0.006 in pad of 2oz cpper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1.25 A (Note 0V -1. /dt = 100 A/µ Min Typ Max Units -2.2 -0.78 -1 guaranteed NDS9405.SAM ...

Page 4

... Figure 4. On-Resistance Variation 1 1.05 1 0.95 0.9 0.85 0.8 0. -50 -25 Figure 6. Gate Threshold Variation V = -3.5V GS -4.0V -4.5V -5.0V -6.0V -10V - -12 - DRAIN CURRENT ( -4. -10V -12 - DRAIN CURRENT ( with Drain Current -250µ 100 125 T , JUNCTION TEMPERATURE (° with Temperature NDS9405.SAM 150 ...

Page 5

... Figure 8. Body Diode Forward Voltage Variation with -4. iss oss 4 C rss Figure 10. Gate Charge Characteristics d(on OUT Figure 12. Switching Waveforms. 25°C -55°C 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature - GATE CHARGE (nC off d(off INVERTED PULSE W IDTH NDS9405.SAM 2 -15V -10V ...

Page 6

... Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. (continued -55° 25°C 3 125°C 1 0.3 0.1 SINGLE PULSE 0.03 0.01 -16 -20 0.1 0.2 Figure 14. Maximum Safe Operating Area TIME (sec -20V 25° DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS9405.SAM ...

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