NDS9405 Fairchild Semiconductor, NDS9405 Datasheet - Page 4

• Manufacturer Part Number: NDS9405
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9405

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9405TR

Typical Electrical Characteristics
-20
-15
-10
20
16
12
-5
8
4
0
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
1
0
V
Figure 1. On-Region Characteristics.
1
-50
GS
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
= -10V
V
I = -4.3A
D
GS
V
-25
= -10V
DS
2
-1
= -10V
-V
- 6.0 - 5.0
with Temperature
V
GS
DS
0
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
- 4.5
3
-2
25
T = -55°C
J
50
- 4.0
-3
4
2 5
75
.
1 2 5
- 3.5
100
-4
5
- 3.0
125
-5
6
150
2.5
1.5
0.5
2.5
1.5
0.5
1.05
0.95
0.85
0.75
3
2
1
2
1
1.1
0.9
0.8
0
0
with Drain Current and Gate Voltage.
1
-50
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
Figure 6. Gate Threshold Variation
T = 25°C
J
-25
-3
-3
with Drain Current
with Temperature
0
T , JUNCTION TEMPERATURE (°C)
J
I
I
D
D
V
GS
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
25
-6
-6
= -3.5V
50
-9
-9
75
.
-4.0V
.
V
GS
-4.5V
100
V
V
I
= -4.5V
GS
D
-5.0V
DS
-12
-12
-6.0V
= -250µA
= V
= -10V
-10V
NDS9405.SAM
125
GS
-15
-15
150