MOSFET N-CH 300V 14A TO-220F

FDPF14N30

Manufacturer Part NumberFDPF14N30
DescriptionMOSFET N-CH 300V 14A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF14N30 datasheet
 


Specifications of FDPF14N30

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs290 mOhm @ 7A, 10VDrain To Source Voltage (vdss)300V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs25nC @ 10VInput Capacitance (ciss) @ Vds1060pF @ 25V
Power - Max35WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.29 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)10.5 SDrain-source Breakdown Voltage300 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current14 A
Power Dissipation35000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
• 14A, 300V, R
= 0.29Ω @V
DS(on)
GS
• Low gate charge ( typical 18 nC)
• Low C
( typical 17 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
February 2007
UniFET
D
G
S
FDP14N30
FDPF14N30
Unit
300
14
14 *
8.4 ∗
8.4
56 ∗
56
±30
330
14
14
4.5
140
35
1.12
0.28
W/°C
-55 to +150
300
FDP14N30
FDPF14N30
Unit
°C/W
0.89
3.56
°C/W
0.5
--
°C/W
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C

FDPF14N30 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP14N30 / FDPF14N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 14A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP14N30 / FDPF14N30 Rev. A Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C oss C iss 1000 C rss Drain-Source Voltage [V] DS FDP14N30 / FDPF14N30 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

  • Page 4

    ... Limited DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP14N30 / FDPF14N30 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP14N30 Figure 11-2. Transient Thermal Response Curve - FDPF14N30 FDP14N30 / FDPF14N30 Rev. A (Continued tio tio θ θ θ θ www.fairchildsemi.com ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP14N30 / FDPF14N30 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP14N30 / FDPF14N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP14N30 / FDPF14N30 Rev. A TO-220 8 www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP14N30 / FDPF14N30 Rev. A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...