FDPF14N30 Fairchild Semiconductor, FDPF14N30 Datasheet - Page 4

• Manufacturer Part Number: FDPF14N30
• Description: MOSFET N-CH 300V 14A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF14N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 35000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP14N30 / FDPF14N30 Rev. A
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variation
10
10
15
10
10
10
10
5
0
-1
-2
25
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
- FDP14N30
50
vs. Temperature
-50
V
T
DS(on)
T
DS
C
, Case Temperature [
J
, Drain-Source Voltage [V]
, Junction Temperature [
0
10
75
1
50
100
o
100 ms
100
C]
DC
o
10 ms
C]
* Notes :
* Notes :
1. T
2. T
3. Single Pulse
10
1. V
2. I
1 ms
125
2
C
J
D
GS
= 150
= 25
= 250
150
= 0 V
100
o
μ
C
o
C
A
μ
s
10
150
μ
200
s
(Continued)
4
10
10
10
10
10
Figure 9-2. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 8. On-Resistance Variation
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Operation in This Area
is Limited by R
-50
- FDPF14N30
V
DS(on)
DS
vs. Temperature
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
10
0
1
50
DC
100 ms
10 ms
* Notes :
100
1. T
2. T
3. Single Pulse
o
C]
1 ms
C
J
= 150
10
= 25
2
100
o
* Notes :
C
o
C
1. V
2. I
150
μ
D
10
s
GS
= 7 A
www.fairchildsemi.com
= 10 V
μ
s
200