FDPF14N30 Fairchild Semiconductor, FDPF14N30 Datasheet - Page 4

MOSFET N-CH 300V 14A TO-220F

FDPF14N30

Manufacturer Part Number
FDPF14N30
Description
MOSFET N-CH 300V 14A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF14N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10.5 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
35000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF14N30
Manufacturer:
ST
Quantity:
40 000
Part Number:
FDPF14N30
Manufacturer:
ST
0
Part Number:
FDPF14N30
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP14N30 / FDPF14N30 Rev. A
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variation
10
10
15
10
10
10
10
5
0
-1
-2
25
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
- FDP14N30
50
vs. Temperature
-50
V
T
DS(on)
T
DS
C
, Case Temperature [
J
, Drain-Source Voltage [V]
, Junction Temperature [
0
10
75
1
50
100
o
100 ms
100
C]
DC
o
10 ms
C]
* Notes :
* Notes :
1. T
2. T
3. Single Pulse
10
1. V
2. I
1 ms
125
2
C
J
D
GS
= 150
= 25
= 250
150
= 0 V
100
o
μ
C
o
C
A
μ
s
10
150
μ
200
s
(Continued)
4
10
10
10
10
10
Figure 9-2. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 8. On-Resistance Variation
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Operation in This Area
is Limited by R
-50
- FDPF14N30
V
DS(on)
DS
vs. Temperature
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
10
0
1
50
DC
100 ms
10 ms
* Notes :
100
1. T
2. T
3. Single Pulse
o
C]
1 ms
C
J
= 150
10
= 25
2
100
o
* Notes :
C
o
C
1. V
2. I
150
μ
D
10
s
GS
= 7 A
www.fairchildsemi.com
= 10 V
μ
s
200

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