MOSFET N-CH 200V 39A TO-220F

FDPF39N20

Manufacturer Part NumberFDPF39N20
DescriptionMOSFET N-CH 200V 39A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
TypePower MOSFET
FDPF39N20 datasheet
 


Specifications of FDPF39N20

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs66 mOhm @ 19.5A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C39AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs49nC @ 10VInput Capacitance (ciss) @ Vds2130pF @ 25V
Power - Max37WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id39ADrain Source Voltage Vds200V
On Resistance Rds(on)66mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ5VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)0.056 Ohms
Forward Transconductance Gfs (max / Min)28.5 SDrain-source Breakdown Voltage200 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current39 A
Power Dissipation37 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.066Ohm
Drain-source On-volt200VGate-source Voltage (max)±30V
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP39N20 / FDPF39N20
200V N-Channel MOSFET
Features
• 39A, 200V, R
= 0.066Ω @V
DS(on)
• Low gate charge ( typical 38 nC)
• Low C
( typical 57 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP39N20 / FDPF39N20 Rev. B
Description
= 10 V
These N-Channel enhancement mode power field effect
GS
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
April 2007
UniFET
D
G
S
FDP39N20
FDPF39N20
Unit
200
39
39 *
23.4 ∗
23.4
156 ∗
156
±30
860
39
25.1
4.5
251
37
2.0
0.29
W/°C
-55 to +150
300
FDP39N20
FDPF39N20
Unit
°C/W
0.5
3.4
°C/W
0.5
-
°C/W
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C

FDPF39N20 Summary of contents

  • Page 1

    ... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP39N20 / FDPF39N20 Rev. B Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 39A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP39N20 / FDPF39N20 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... Drain Current and Gate Voltage 0.14 0.12 0. 10V GS 0.08 0.06 0. Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C oss C iss 2000 C rss Drain-Source Voltage [V] DS FDP39N20 / FDPF39N20 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V Note : ...

  • Page 4

    ... Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP39N20 / FDPF39N20 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 10 μ ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP39N20 Figure 11-2. Transient Thermal Response Curve - FDPF39N20 FDP39N20 / FDPF39N20 Rev. B (Continued tio tio θ θ θ θ www.fairchildsemi.com ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP39N20 / FDPF39N20 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP39N20 / FDPF39N20 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions 9.90 (8.70) ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP39N20 / FDPF39N20 Rev. B TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP39N20 / FDPF39N20 Rev. B TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP39N20 / FDPF39N20 Rev. B i-Lo™ Power-SPM™ ® ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...