MOSFET N-CH 250V 44A TO-220F

FDPF44N25T

Manufacturer Part NumberFDPF44N25T
DescriptionMOSFET N-CH 250V 44A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF44N25T datasheet
 

Specifications of FDPF44N25T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs69 mOhm @ 22A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C44AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs61nC @ 10VInput Capacitance (ciss) @ Vds2870pF @ 25V
Power - Max38WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.069 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current18 APower Dissipation38 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (364Kb)Embed
Next
FDP44N25 / FDPF44N25
250V N-Channel MOSFET
Features
• 44A, 250V, R
= 0.069Ω @V
DS(on)
GS
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2009 Fairchild Semiconductor Corporation
FDP44N25 / FDPF44N25T Rev. B
T
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
Parameter
FDP44N25
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
FDP44N25
1
March 2009
UniFET
D
G
S
FDPF44N25T
Unit
250
V
44
44*
A
26.4
26.4*
A
A
176
176*
± 30
V
2055
mJ
44
A
30.7
mJ
4.5
V/ns
307
38
W
2.45
0.3
W/°C
°C
-55 to +150
°C
300
FDPF44N25T
Unit
°C/W
0.41
3.3
°C/W
0.5
--
°C/W
62.5
62.5
www.fairchildsemi.com
TM

FDPF44N25T Summary of contents

  • Page 1

    ... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP44N25 / FDPF44N25T Rev Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 44A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP44N25 / FDPF44N25T Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP44N25 / FDPF44N25T Rev. B Figure 2. Transfer Characteristics Notes : μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V ...

  • Page 4

    ... DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FDP44N25 / FDPF44N25T Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : μ 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area μ 10 ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP44N25 - Figure 11-2. Transient Thermal Response Curve for FDPF44N25 FDP44N25 / FDPF44N25T Rev. B (Continued) D=0.5 0.2 0 0.05 0. otes : 0. θ uty Factor, D=t single pulse Square W ave Pulse Duration [sec] 1 D=0.5 0.2 0 ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP44N25 / FDPF44N25T Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP44N25 / FDPF44N25T Rev www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP44N25 / FDPF44N25T Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions FDP44N25 / FDPF44N25T Rev. B (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP44N25 / FDPF44N25T Rev. B ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...