FDPF44N25T Fairchild Semiconductor, FDPF44N25T Datasheet

MOSFET N-CH 250V 44A TO-220F

FDPF44N25T

Manufacturer Part Number
FDPF44N25T
Description
MOSFET N-CH 250V 44A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF44N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
69 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
2870pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.069 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP44N25 / FDPF44N25T Rev. B
FDP44N25 / FDPF44N25
250V N-Channel MOSFET
Features
• 44A, 250V, R
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
G
D
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.069Ω @V
TO-220
FDP Series
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
T
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP44N25
FDP44N25
26.4
2.45
176
307
44
0.41
62.5
0.5
-55 to +150
2055
± 30
30.7
250
300
4.5
44
FDPF44N25T
FDPF44N25T
G
26.4*
176*
44*
0.3
38
62.5
3.3
UniFET
--
March 2009
S
D
www.fairchildsemi.com
Unit
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF44N25T Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP44N25 / FDPF44N25T Rev Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 44A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP44N25 / FDPF44N25T Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP44N25 / FDPF44N25T Rev. B Figure 2. Transfer Characteristics Notes : μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V ...

Page 4

... DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FDP44N25 / FDPF44N25T Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : μ 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area μ 10 ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP44N25 - Figure 11-2. Transient Thermal Response Curve for FDPF44N25 FDP44N25 / FDPF44N25T Rev. B (Continued) D=0.5 0.2 0 0.05 0. otes : 0. θ uty Factor, D=t single pulse Square W ave Pulse Duration [sec] 1 D=0.5 0.2 0 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP44N25 / FDPF44N25T Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP44N25 / FDPF44N25T Rev www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP44N25 / FDPF44N25T Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions FDP44N25 / FDPF44N25T Rev. B (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP44N25 / FDPF44N25T Rev. B ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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